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Silicon Carbide (SiC)

Together with our end-to-end SiC manufacturing capabilities, ۶Ƶ EliteSiC products offer the superior performance and exacting quality standards of products.

By Technology

Silicon Carbide (SiC) Diodes

Our Silicon Carbide diodes use a completely new technology that provides superior switching performance and higher reliability to silicon.

Many people have been using silicon diodes in their machinery, but there is a new option for those looking for better efficiency. SiC diodes are diodes that allow for higher switching performance. They have greater power density and overall increased efficiency. Their reduced energy loss also helps to lower system costs.

Compared to silicon diodes, silicon carbide diodes are more efficient and resistant to high temperatures. They work at high frequencies and higher voltages. Since SiC diodes have faster recovery times than silicon diodes, they're ideal for any kind of current that requires a quick transition from blocking to conducting stages. They also don't get as hot as silicon, allowing them to be used in higher-temperature applications with more efficiency.

Silicon Carbide (SiC) MOSFETs

Our SiC MOSFETs are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost.

MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.

There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat. Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.

Power Module

Silicon Carbide (SiC) Modules

These products contain SiC MOSFETs and SiC diodes. The boost modules are used in the DC-DC stages of solar inverters. These modules use SiC MOSFETs and SiC diodes with voltage ratings of 1200 V.

Si/SiC Hybrid Modules

Si/Sic Hybrid modules contain IGBTs, silicon diodes and SiC diodes. They are used in the DC-AC stages of solar

Reliable Supply of Silicon Carbide (SiC)


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EliteSiC Power Modules for Traction Inverter

The EliteSiC power modules offer bare die solutions, gel-encapsulated case modules, and transfer molded modules, all incorporating full SiC MOSFETs.

  • Direct - Single-Side Direct Cooling, 6 Pack
  • B2 - Single-Side Cooling, Half Bridge

Full SiC & Hybrid SiC Modules

Our package technologies are optimized for:

  • Superior performance
  • Lower thermal resistance than discrete devices
  • Easy-tomount packages to fit industry standard pinouts

Faster Switching More Compact End-Product

1200 V M3S EliteSiC MOSFETs provide up to 20% power loss reduction in hard switching applications compared to industry leading competition.

SiC MOSFETs

EliteSiC Family

EliteSiC MOSFET Families

Family

Seris

650 V

900 V

1200 V

1700 V

Primary Applications

M1

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M1

On-Board Charger UPS/Energy Storage DC Fast EV Charging Solar Inverter High Power Industrial Traction

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M2

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M2

On-Board Charger DC Fast EV Charging High Power Industrial Solar Inverter

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M3

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M3S

On-Board Charger DC Fast EV Charging Solar Inverter

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M3T

UPS/Energy Storage Traction High Power Industrial

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Family

Voltages

Optimization

Best Application

M1

1200V, 1700V

Large die size so low RTH


Balance between switching losses and conduction losses

  • DC-DC solid state relays
  • Traction & motor drives
  • Hard switching applications

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M2

650V, 750V, 1200V

Lowest RDS(ON) for low speed applications

  • DC-DC solid state relays
  • Traction & motor drives

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M3

1200V

Fast switching applications with 15V-18V gate drive

  • Hard switching applications
  • LLC resonant applications

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EliteSiC Diode Families

Family

650 V

900 V

1200 V

1700 V

Primary Applications

D1

View

On-Board Charger UPS/Energy Storage DC Fast EV Charging Solar Inverter High Power Industrial

More Details

D2

View

On-Board Charger DC Fast EV Charging High Power Industrial

More Details

D3

View

On-Board Charger UPS/Energy Storage DC Fast EV Charging Solar Inverter High Power Industrial

More Details

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Family

Voltages

Optimization

Best Application

D1

650V, 1200V, 1700V

Large die size so low RTH and highest surge current ratings

  • Vienna rectifier input stages

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D2

650V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

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D3

1200V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

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Resources

Evaluation/Development Kits

Evaluation kits and boards for silicon carbide products.

Technical Documentation

All related documentation for silicon carbide products.

Supercharging Next Gen EV with EliteSiC Power Modules for Traction Inverter

Discover how ۶Ƶ's end to end silicon carbide solutions, including onboard charging (OBC), revolutionize sustainable energy for tomorrow.

The Future of Silicon Carbide Power Device Manufacturing is Vertically Integrated

Find out three compelling reasons to source your silicon carbide power devices from a vertically integrated supplier.

Delivering Tomorrow's Energy with ۶Ƶ’s Bidirectional OBC & Sustainable Solutions

EliteSiC modules offer increased performance, better efficiency, and higher power density in similar and highly compatible packaging solutions.

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