۶Ƶ

Highly Optimized Technologies Enable Next-gen DC Fast Charging

Our technologies are crafted to meet demands of higher power and density DC fast charging.

25kW SiC Module Based DC Fast Charging System

۶Ƶ helps you to develop a bidirectional DC fast charging/EVSE.

Solutions

Our leading silicon carbide (SiC) technology and continuous innovation in packaging solutions help simplify the design process of EV chargers. With a comprehensive portfolio of discrete power and analog solutions, protections, sensing, and connectivity, ۶Ƶ offers high-quality components to tailor the system to your needs. Our system expertise has been fostered over the last 20 years while bringing together all these technologies to deliver well-rounded solutions.

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25kW SiC Module Based DC Fast Charging System

Our system expert will guide you and highlight the key challenges, trade-offs, and compromises made, and show how to design, build and validate the charging system from scratch using our 25kW SiC module based DC fast charging system reference design.

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Full SiC & Hybrid SiC Modules

Our package technologies are optimized for superior performance, lower thermal resistance than discrete devices, and easy mounting packages that fit industry standard pinouts.

Hybrid Modules Full SiC Modules

Physical, Scalable SPICE Models to Accurately Predict Your Design Reality

Did you know that all SPICE Modelling is Not the same? Our SPICE models will take your simulation results to the next level, accelerating time to market.

Support and Updates

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EliteSiC Diode Families

Family

Voltages

Optimization

Best Application

D1

۶Ƶ

650V, 1200V, 1700V

Large die size so low RTH and highest surge current ratings

  • Vienna rectifier input stages

More Details

D2

۶Ƶ

650V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

More Details

D3

۶Ƶ

1200V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

More Details

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EliteSiC MOSFET Families

Family

Voltages

Optimization

Best Application

M1

۶Ƶ

1200V, 1700V

Large die size so low RTH


Balance between switching losses and conduction losses

  • DC-DC solid state relays
  • Traction & motor drives
  • Hard switching applications

More Details

M2

۶Ƶ

650V, 750V, 1200V

Lowest RDS(ON) for low speed applications

  • DC-DC solid state relays
  • Traction & motor drives

More Details

M3

۶Ƶ

1200V

Fast switching applications with 15V-18V gate drive

  • Hard switching applications
  • LLC resonant applications

More Details

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Evaluation/Development Kits

SEC-25KW-SIC-PIM-GEVK

Full SiC module-based 25kW DC EV charger platform.

SECO-HVDCDC1362-15W-GEVB

15 W SiC High-Voltage Auxiliary Power Supply for HEV & BEV Applications.

SECO-GDBB-GEVB

Gate drivers plug-and-play ecosystem

SECO-HVDCDC1362-40W-GEVB

40 W SiC high-voltage auxiliary power supply for HEV & BEV applications

SECO-LVDCDC3064-IGBT-GEVB

6 - 18 Vdc Input Isolated IGBT Gate Driver Supply +15 V / -7.5 V / 7.5 V with Automotive Qualified NCV3064 Controller

SECO-LVDCDC3064-SIC-GEVB

6-18 Vdc Input Isolated SiC Gate Driver Supply +20V/-5V/5V with Automotive Qualified NCV3064 Controller Evaluation Board

Technical Documents

Designing DC Fast Charges (DCFC) for Efficiency, Reliability, and Safety

This paper will explain key DCFC design considerations and architectures to provide the highest efficiency, reliability and performance.

Lessons Learned: Developing a 25 kW DC Fast EV Charging Module

In this deep dive into the development of ۶Ƶ’s 25 kW DC fast charging reference design for EVs, you will learn design tips and tricks from both hardware and firmware perspectives.

SiC Simulations

This paper will explain simulation results that can be obtained only by simulation and how to use them in some high-power conversion topologies.

Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices

This paper describes how ۶Ƶ’s physically based, scalable SPICE models will take your simulation results to the next level, as a result, shorten your time to market.

Using Physical and Scalable Simulation Models to Evaluate Parameters and Application Results

Physical and scalable modeling technique is an advanced SPICE modeling approach based on process and layout parameters which enables design optimization through a direct link between SPICE, physical design, and process technology.

Fast DC EV Charging: Common Topologies and Power Devices Used in the System

In this paper, we will discuss an overview of typical power converter topologies and power devices for the AC−DC and the DC−DC used in fast DC EV charging.

Electric Vehicle DC Fast Charging: Holistic Overview

E−mobility and vehicle electrification buzz has been around for a while now. Strikingly enough, the first electric vehicles (EV) appeared in the late XIX century.

Thermal Management in Silicon Carbide (SiC) Designs

This paper describes thermal management implications when it comes to using the Silicon Carbide (SiC).

Reliability and Quality for IGBTs

In today’s semiconductor marketplace two important elements for the success of a company are product quality and reliability.

Effect of Gate-Emitter Voltage on Turn on Losses and Short Circuit Capability

This application note describes some of the impacts of the gate-emitter voltage on the IGBT device performance.

Thermal Calculations for IGBTs

IGBTs generally require a more complex set of calculations to determine the die temperatures than do most power semiconductors.

IGBT Basics

This paper teaches you basic of IGBT such as it’s structure, gate drive basic and considerations, over−voltage and short circuit protection.

Engineering Essentials: Choosing Between Digital Isolators or Optocouplers

As energy demand expands, current and voltage values also rise. Higher voltages are more common in many applications, even in standalone applications.

Mounting Instructions for PIM Modules (Q0, Q1, Q2, F1, F2)

This application note covers the mounting instructions for ۶Ƶ Power Integrated Modules (PIMs) using the following packages: Q0, Q1, Q2, F1, F2.

High Efficiency DC-DC Converter Module

The NCP12700 is fixed frequency, peak current mode PWM controller for single-ended switch mode power supplies (SMPS).

Reading ۶Ƶ IGBT Datasheets

The Insulated Gate Bipolar Transistor is a power switch well suited for high power applications such as motor control, UPS and solar inverters, and induction heating.

Standard Gate-Driver Optocouplers

The FOD31xx family of gate drivers functions as a power buffer to control the gate of a power MOSFET or IGBT.

MOSFET Basics

The Bipolar Power Transistor (BPT), as a switching device for power applications, had a few disadvantages. This led to the development of the power Metal Oxide Semiconductor Field Effect Transistor (MOSFET).

Galvanic Isolation Gate Driver Design Tips

This application note describes some parameters, functions, and design tips of ۶Ƶ’s galvanic isolation gate drivers in system application.

۶Ƶ M 1 1200 V SiC MOSFETs & Modules: Characteristics and Driving Recommendations

This paper provides an overview on the key characteristics of ۶Ƶ M 1 1200 V SiC MOSFETs and how they can be influenced by the driving conditions. As part of the full wide bandgap ecosystem that ۶Ƶ offers, this article also provides a guideline on the usage of an isolated gate driver for SiC MOSFETs.

SiC MOSFETs: Gate Drive Optimization

This paper highlights the unique device characteristics associated with SiC MOSFETs. Critical design requirements related to optimal gate−drive design for maximizing SiC switching performance and system level considerations will also be discussed.

Power Packages Heat Sink Mounting Guide

This document provides guidelines for mounting heat sinks for the proper thermal management. We describe heat-sink mounting methods, considerations, contact thermal resistance, and mounting torque for various packages.

A Guideline on the Usage of an Isolated Gate Driver to Efficiently Drive SiC MOSFETs

SiC MOSFETs have become a real alternative to using IGBTs in power applications. Isolated gate drivers are designed for the highest switching speeds and system size constrains required by technologies such as SiC by providing reliable control over IGBT and MOSFET. This application note focuses on optimization the design of gate driving voltage for speed to minimize switching losses and to get the full benefit of the devices.

650 V Super-Junction MOSFET for High Efficiency and Reliable EV Charging Applications

This document describes best in class body diode performance and low dynamic COSS loss of SUPERFET III FRFET. Due to the very low A·RDS(ON) of the SUPERFET III FRFET, it is highly optimized for the two−level FB LLC resonant converter for high power fast EV charging applications.

Videos

Learn more about DC Fast EV Charging at ۶Ƶ by looking at one of the videos below.